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| DC COMPONENTS CO., LTD. R 2N3055 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 1.573 Max (39.96) .875(22.23) .759(19.28) .450(11.43) .250(6.35) .480(12.19) .440(11.18) Pinning 1 = Base 2 = Emitter Case = Collector .135 Max (3.43) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VCEV VEBO IC IB PD TJ TSTG Rating 100 60 70 7 15 7 115 +200 -65 to +200 Unit V V V V A A W o o .225(5.72) .205(5.20) .169(4.30) .151(3.84) .043(1.09) .038(0.97) 1.197(30.40) 1.177(29.90) .681(17.30) .655(16.64) 2 .440(11.18) 1.050(26.67) .420(10.67) 1.011(25.68) 1 Case: Collector .169(4.30) .151(3.84) C C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Emitter Sustaining Volatge (Ratings at 25 C ambient temperature unless otherwise specified) Symbol VCEO(sus) VCER(sus) ICEO Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain(1) Second Breakdown Collector with Base Forward Bias Current Gain - Bandwidth Product Small-Signal Current Gain Small-Signal Current Gain Cutoff Frequency (1)Pulse Test: Pulse Width 300s, Duty Cycle (1) Min 60 70 20 5 2.87 2.5 15 10 Typ - Max 0.7 1 5 5 1.1 3 1.5 70 120 - Unit V V mA mA mA mA V V V A MHz KHz Test Conditions IC=0.2A, IB=0 IC=0.2A, RBE=100 VCE=30V, IB=0 VCE=100V, VBE(off)=1.5V VCE=100V, VBE(off)=1.5V, TC=150 C VBE=7V, IC=0 IC=4A, IB=0.4A IC=10A, IB=3.3A IC=4A, VCE=4V IC=4A, VCE=4V IC=10A, VCE=4V VCE=40V, t=1.0s, Non-repetitive IC=0.5A, VCE=10V, f=1MHz IC=10A, VCE=4V, f=1KHz IC=1A, VCE=4V, f=1KHz o ICEX IEBO VCE(sat)1 VCE(sat)2 VBE(on) hFE1 hFE2 Is/b fT hfe fhfe 2% |
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